PMWD20XN,118

Overview

The PMWD20XN is a dual common drain N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It operates with a drain-source voltage of 20 V and supports continuous drain currents up to 10.4 A at 25 °C. The device features an extremely low on-state resistance of 24 mΩ maximum at VGS = 4.5 V, ensuring efficient power handling. Packaged in a surface-mounted SOT530-1 (TSSOP8) plastic thin shrink small outline package, it provides a compact solution for portable appliances and battery management systems.

Feature Summary

• Dual N-channel configuration using μTrenchMOS technology
• Extremely low threshold voltage for fast switching
• Low profile surface-mounted package

Applications

• Portable appliances
• Battery management

Procurement Notes

Verify the component status against the most recently issued data sheet before initiating or completing a design. The product status may have changed since publication. Consult official manufacturer channels for current availability and confirm that the ordering suffix matches the required specifications.

Selection Notes

Select this component based on its 20 V drain-source voltage rating and 24 mΩ maximum on-state resistance. Ensure thermal management aligns with the specified junction-to-solder point thermal resistance of 30 K/W. Verify that gate drive voltages remain within the ±12 V limit and that peak currents do not exceed the safe operating area boundaries defined in the datasheet.

Part Context

This part belongs to the N-channel FET family characterized by TrenchMOS technology. It serves as a low-profile alternative for applications requiring high efficiency and fast switching speeds. The dual configuration allows for space-saving designs in portable electronics compared to single discrete devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.