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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7.8A 8TSSOP
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.8A
- Rds On (Max) @ Id, Vgs：30mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：23.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1366pF @ 16V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
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Overview
The PMWD26UN is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It features an ultra-low threshold voltage and fast switching capabilities within a surface-mounted plastic package. The device supports a drain-source voltage of 20 V, continuous drain current up to 7.8 A at 25 °C, and total power dissipation of 3.1 W. On-state resistance is specified at 30 mΩ maximum at VGS = 4.5 V. Thermal resistance from junction to solder point is 40 K/W.
Feature Summary
- Dual N-channel configuration in a single compact SOT530-1 package
- Ultra-low gate-source threshold voltage for efficient low-level control
- Fast switching performance suitable for high-frequency applications
- Low on-state resistance to minimize conduction losses
Applications
- Portable appliances
- PCMCIA cards
- Battery management systems
- Load switching circuits
Procurement Notes
Verify the specific ordering code suffix against the manufacturer's current documentation to ensure correct packaging orientation and reel specifications. Confirm that the component status aligns with project requirements, as product availability may change over time. Cross-reference the datasheet revision date to ensure all electrical characteristics and thermal limits are accurate for the intended design implementation.
Selection Notes
Select this component for designs requiring dual N-channel FETs with low drive voltage requirements. Ensure the operating junction temperature remains within the -55 °C to +150 °C range. Verify that the peak drain current does not exceed 31.3 A under pulsed conditions. Consider the thermal resistance values when designing heat dissipation strategies for the printed-circuit board footprint.
Part Context
This component belongs to the μTrenchMOS family of power MOSFETs designed for low-voltage, high-efficiency switching applications. It integrates two independent N-channel devices into a single thin shrink small outline package, optimizing board space while maintaining robust electrical performance for portable and battery-powered electronic systems.
Replacement Considerations
Consult official replacement lists or distributor cross-reference tools for verified equivalent part numbers. Ensure any substitute matches the SOT530-1 package dimensions and maintains comparable electrical parameters such as RDSon and VGS(th).
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is 7.8 A at a solder point temperature of 25 °C.
What is the gate-source threshold voltage range?
The gate-source threshold voltage ranges from 0.45 V to 0.7 V at a drain current of 1 mA.
What package type is used for the PMWD26UN?
The device is housed in a TSSOP8 plastic thin shrink small outline package, designated as SOT530-1.
