PN3563_D26Z

Overview

The PN3563 is an NPN silicon RF amplifier transistor designed for high-frequency applications. It operates with a collector-emitter voltage of 15 V and supports a continuous collector current of 50 mA, dissipating up to 350 mW of power. The device features a transition frequency (fT) ranging from 600 MHz to 1500 MHz at 8.0 mA and 10 V. DC current gain (hFE) spans 20 to 200 under the same conditions. Power gain ranges from 14 dB to 26 dB at 200 MHz. It utilizes a TO-92 package and functions within a junction temperature range of -55°C to +150°C.

Feature Summary

• Engineered for RF amplification, oscillation, and frequency multiplication tasks.
• Capable of operation across a wide thermal range suitable for demanding environments.
• Provides stable small-signal performance with defined capacitance parameters.

Applications

• RF amplifier circuits
• Oscillator designs
• Frequency multipliers

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm datasheet revisions match design requirements. Check for lead-free compliance if required by specific regulations. Validate packaging type against assembly line specifications. Ensure storage conditions prevent moisture damage prior to soldering.

Selection Notes

Evaluate fT and power gain requirements against target operating frequencies. Verify that collector current limits accommodate circuit biasing needs. Consider thermal resistance values for heat dissipation in enclosed spaces. Compare input and output capacitances for impedance matching purposes. Assess package compatibility with existing PCB footprints.

Part Context

Originally manufactured by Fairchild Semiconductor, this component was later acquired by onsemi. The part belongs to the PN356 series of RF transistors. It serves as a legacy solution for analog RF front-end designs where discrete amplification is preferred over integrated modules.

Replacement Considerations

Infineon Technologies BFP193WH6327XTSA1 and BFP843FH6327XTSA1 are documented as similar replacement options.

FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 30 V when measured with the emitter open and a collector current of 100 µA.

How does the device handle thermal stress?

The junction-to-ambient thermal resistance is 357 °C/W, and the junction-to-case resistance is 125 °C/W. Total device dissipation is 350 mW at 25°C ambient, derating by 2.8 mW/°C above that temperature.

What are the typical capacitance values?

Output capacitance (Cobo) is typically 1.7 pF at 10 V reverse bias. Input capacitance (Cibo) is typically 2.0 pF at 0.5 V forward bias.