PN3563_D74Z

PN3563_D74Z

$0.03
  • Description:RF TRANS NPN 15V 1.5GHZ TO-92-3
  • Series:-

SKU:32dea4db2bdc Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 1.5GHZ TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:1.5GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:14dB ~ 26dB
  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 8mA, 10V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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PN3563_D74Z

Overview

The PN3563_D74Z is an NPN RF amplifier transistor manufactured by onsemi, formerly Fairchild Semiconductor. It is designed for use in RF amplifiers, oscillators, and multipliers with collector currents ranging from 1.0 mA to 30 mA. The device features a maximum collector-emitter voltage of 15 V and a continuous collector current of 50 mA. It operates within a junction temperature range of -55°C to +150°C and has a total device dissipation of 350 mW at 25°C. The transition frequency (fT) reaches up to 1500 MHz at 8.0 mA and 10 V. Power gain ranges from 14 dB to 26 dB at 200 MHz. The component is housed in a TO-92 package.

Feature Summary

  • Designed for RF amplification, oscillation, and frequency multiplication applications
  • Capable of high-frequency operation with a transition frequency up to 1500 MHz
  • Suitable for low-power circuits with a total device dissipation of 350 mW

Applications

  • RF Amplifier circuits
  • Oscillator designs
  • Frequency Multiplier stages

Procurement Notes

Verify the manufacturer origin carefully, as the part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the D74Z suffix corresponds to the Ammo Pack packaging style containing 2,000 units per box. Ensure compatibility with existing thermal management strategies given the 357 °C/W thermal resistance from junction to ambient.

Selection Notes

Select this component when designing circuits requiring an NPN transistor for frequencies up to 1.5 GHz. Ensure the operating collector current remains between 1.0 mA and 30 mA for optimal performance. Verify that the power supply can support the required 15 V collector-emitter breakdown voltage and that the PCB layout accommodates the TO-92 through-hole package dimensions.

Part Context

The PN3563 belongs to the PN356 series of NPN RF transistors. It utilizes Process 43 technology. The datasheet indicates it is sourced from Fairchild Semiconductor specifications, which are now managed under the onsemi portfolio. The D74Z suffix specifically denotes the Ammo Pack packaging configuration.

Replacement Considerations

Public confirmed substitute part numbers include BFP193WH6327XTSA1 and BFP843FH6327XTSA1 from Infineon Technologies.

PN3563_D74ZPN3563_D74Z
$0.03
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