PN4093 TIN/LEAD

PN4093 TIN/LEAD

$0.43
  • Description:1V 5V 10MA 625MW TH JFET N CHANN
  • Series:-

SKU:d52afa8e2264 Category: Brand:

  
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Product Detailed Parameters

  • Description:1V 5V 10MA 625MW TH JFET N CHANN
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):200 pA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):80 Ohms
  • Power - Max:625 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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PN4093 TIN/LEAD

Overview

The PN4093 TIN/LEAD is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of 40 V, and a maximum power dissipation of 625 mW. The device operates within a temperature range of -65°C to +150°C.

Feature Summary

  • N-channel JFET configuration for signal amplification
  • Silicon-based construction for thermal stability
  • Through-hole mounting capability

Applications

  • Low-noise amplifier circuits
  • High-impedance input stages
  • Analog switching applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free status or tin-lead composition requirements. Ensure the selected variant matches the intended RoHS compliance standards for the target assembly process. Cross-reference datasheet revisions to confirm pinout consistency before integration into final designs.

Selection Notes

Select this component for applications requiring high input impedance and low noise characteristics. The TO-92-3 package suits prototyping and low-volume production where through-hole reliability is preferred. Evaluate thermal management needs given the 625 mW power dissipation limit in enclosed environments.

Part Context

This part belongs to the Central Semiconductor discrete transistor portfolio, specifically within the JFET category. It serves as a fundamental active component for analog electronics, providing voltage-controlled resistance properties essential for linear circuit design and signal processing tasks.

Replacement Considerations

Consult official substitution guides for equivalent N-channel JFETs with matching voltage ratings and package dimensions. Verify that alternative components meet the same thermal and electrical performance criteria without altering circuit biasing conditions.

PN4093 TIN/LEADPN4093 TIN/LEAD
$0.43
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