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The PN4117A_D26Z is an N-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It features a Drain-Gate Voltage of 40 V and a Gate-Source Voltage of -40 V. The device operates within a temperature range of -55°C to +150°C. Electrical characteristics include a Gate-Source Breakdown Voltage of 40 V, a Gate-Source Cutoff Voltage between -0.6 V and -1.8 V, and a Zero-Gate Voltage Drain Current ranging from 30 µA to 90 µA. Small signal parameters specify a Common Source Forward Transconductance of 70 to 210 mmhos and an Input Capacitance of 3.0 pF. Total device dissipation is rated at 350 mW.
Verify the component status carefully before procurement. Official documentation indicates this product line may be discontinued or obsolete. Confirm availability through authorized distributors and ensure the specific D26Z suffix matches your packaging requirements. Cross-reference with current onsemi catalogs for active alternatives if continuous production is required.
Select this component when designing circuits requiring low leakage and high input impedance. Ensure the operating voltage does not exceed the 40 V breakdown limits. Consider the thermal resistance values for heat dissipation in enclosed environments. Verify that the TO-92 package fits the mechanical constraints of the target assembly.
This part belongs to the PN4117 series of N-Channel JFETs originally developed by Fairchild Semiconductor. The series is characterized by low capacitance and low leakage, making it suitable for precision analog front ends. The D26Z suffix typically denotes a specific tape and reel packaging configuration for automated assembly.
Check for updated Fairchild/ON Semiconductor part numbers due to system integration changes. Verify pinout compatibility with existing PCB layouts. Ensure replacement devices meet the same electrical specifications for transconductance and cutoff voltage.