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Product Detailed Parameters
- Description：JFET N-CH 40V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：200 µA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：3pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The PN4119 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a Gate-to-Source Breakdown Voltage (V(BR)GSS) of at least -40V and a Drain-to-Source Saturation Current (IDSS) ranging from 0.2mA to 1.5mA. The Gate-to-Source Cutoff Voltage (VGS(off)) is specified between -2V and -6V. Forward transconductance (gfs) is typically 100µS. The device operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 350mW in a TO-92-3 package.
Feature Summary
- Designed for ultra-high input impedance applications in mid to high frequency circuits
- Hermetically sealed construction suitable for military and harsh environments
- Low gate leakage current characteristics
Applications
- Ultra-high input impedance amplifier stages
- Mid to high frequency circuit designs
- Low-level power supply control circuits
Procurement Notes
Verify the specific suffix (e.g., A or no suffix) against the datasheet to confirm binning options for IDSS and VGS(off). Confirm packaging type (TO-92 bulk vs. tape/reel) matches assembly requirements. Check for updated part numbers due to Fairchild Semiconductor integration into ON Semiconductor, ensuring underscores are replaced with dashes if referencing legacy documentation.
Selection Notes
Select the PN4119 when high input impedance and low gate leakage are critical for signal integrity. Compare IDSS ranges across variants (PN4117/18/19) to match specific biasing needs. Ensure the TO-92 through-hole package fits the PCB layout constraints. Verify thermal derating requirements for operation above 25°C ambient temperature.
Part Context
The PN4119 belongs to the 2N4117/18/19 family of N-channel JFETs. These devices are engineered for precision analog applications requiring minimal gate current. The family shares similar electrical characteristics but varies in saturation current bins to accommodate different gain and biasing specifications in amplifier designs.
Replacement Considerations
Direct substitutes include PN4117 and PN4118, which share the same package and general function but differ in IDSS and VGS(off) bins. Verify that the alternative's electrical parameters meet the specific circuit requirements for cutoff voltage and transconductance.
