PN5179_D26Z

PN5179_D26Z

  • Description:RF TRANS NPN 12V 2GHZ TO-92-3
  • Series:-

SKU:cef8f9d9479d Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 2GHZ TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:2GHz
  • Noise Figure (dB Typ @ f):5dB @ 200MHz
  • Gain:15dB
  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 3mA, 1V
  • Current - Collector (Ic) (Max):50mA
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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PN5179_D26Z

Overview

The PN5179_D26Z is an NPN RF transistor designed for low noise UHF/VHF amplifiers and high output UHF oscillators. It operates with collector currents between 100 µA and 30 mA in common emitter or base modes. Key electrical parameters include a collector-emitter voltage of 12 V, collector-base breakdown voltage of 20 V, and continuous collector current of 50 mA. The device features a minimum DC current gain (hFE) of 25 at 3.0 mA and a maximum small-signal current gain of 300. The transition frequency (fT) ranges from 900 MHz to 2000 MHz at 5.0 mA. Thermal dissipation is rated at 350 mW in TO-92 packaging, with a junction temperature range of -55°C to +150°C.

Feature Summary

  • Optimized for low noise performance in UHF and VHF amplifier applications
  • Capable of functioning as a high output oscillator with low frequency drift
  • Designed for operation in both common emitter and common base configurations

Applications

  • Low noise UHF/VHF amplifiers
  • High output UHF oscillators
  • Broadband amplification circuits

Procurement Notes

Verify the specific ordering suffix D26Z corresponds to the required tape and reel packaging configuration for automated assembly. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing standards. Ensure the supplier provides documentation confirming the device originates from Process 40 to guarantee consistent electrical characteristics.

Selection Notes

Select this component when designing circuits requiring high transition frequencies up to 2 GHz with low noise figures around 5 dB. Consider the thermal resistance of 357 °C/W for TO-92 packages when calculating heat dissipation limits. Evaluate the 50 mA continuous collector current limit against peak load requirements to prevent exceeding absolute maximum ratings during transient conditions.

Part Context

This part belongs to the MPS5179/PN5179 family of NPN RF transistors originally developed by Fairchild Semiconductor. The PN5179 designation specifically identifies the standard radial leaded version intended for through-hole mounting. The device shares electrical specifications with the MMBT5179 surface-mount variant but differs in physical package geometry and thermal handling capabilities.

Replacement Considerations

The MMBT5179 serves as a functional equivalent in SOT-23 packaging. Verify pinout compatibility and thermal derating differences before substitution. Cross-reference datasheets to ensure noise figure and transition frequency specifications align with the original design intent.

PN5179_D26ZPN5179_D26Z

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