PRF949,115

$0.35

Description：RF TRANS NPN 10V 9GHZ SC-75
Series：-

SKU:73466cb703e9 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 9GHZ SC-75
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：9GHz
Noise Figure (dB Typ @ f)：1.5dB ~ 2.5dB @ 1GHz
Gain：-
Power - Max：150mW
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 5mA, 6V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SC-75
Grade：-
Qualification：-

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PRF949,115

Overview

The PRF949,115 is a silicon NPN wideband transistor housed in a surface-mount SOT416 (SC-75) package. It operates with a collector-emitter voltage of 10 V and a maximum DC collector current of 50 mA. The device features a transition frequency up to 9 GHz and a typical maximum unilateral power gain of 16 dB at 1 GHz. Total power dissipation is rated at 150 mW at a soldering point temperature of 75 °C. The component includes gold metallization for reliability and supports an operating junction temperature up to 150 °C.

Feature Summary

Gold metallization ensures excellent reliability
Designed for low noise and low distortion performance
High gain characteristics suitable for UHF applications

Applications

RF front end of analog and digital cellular telephones
Cordless phones
Radar detectors
Pagers
Satellite TV-tuners

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging orientation and tape specifications. Confirm that the component meets all required RoHS directives and environmental standards before finalizing procurement orders. Ensure compatibility with existing supply chain requirements.

Selection Notes

Select this component for high-frequency designs requiring stable operation in the GHz range. Evaluate thermal management strategies carefully, as power dissipation is strictly dependent on the soldering point temperature. Verify impedance matching networks align with the provided stability circles and noise figure data for optimal circuit performance.

Part Context

This part belongs to the discrete semiconductor category, specifically classified as an RF bipolar transistor. It was originally manufactured by Philips Semiconductors and is now distributed under the NXP brand. The datasheet indicates it is a product specification document from April 2000, superseding earlier versions from November 1999.