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The PRHMB200W12 is a single IGBT module manufactured by KYOCERA AVX, designed for high-power switching applications. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 200 A. The device is housed in a chassis mount package suitable for industrial power conversion systems. Key electrical characteristics include a maximum power dissipation of 961 W and an operating junction temperature range from -40°C to +150°C. This component integrates a single insulated gate bipolar transistor without an associated NTC thermistor.
Verify the specific datasheet version and mechanical drawing dimensions prior to integration, as chassis mounting requirements may vary. Confirm that the absence of an integrated NTC thermistor aligns with the thermal management strategy of the target design. Ensure compatibility with standard IGBT gate drive voltages and isolation requirements for safe operation within the specified temperature range.
Select this module when a single high-current switching element is required for regenerative braking or DC link voltage clamping. The 1200 V rating provides sufficient headroom for standard three-phase AC bus voltages. Consider the 200 A current capacity against peak load demands and ensure adequate heatsink surface area to maintain junction temperatures within the 150°C limit under continuous operation.
This component belongs to the IGBT module product line offered by KYOCERA AVX, focusing on power electronics solutions for industrial automation. These modules are engineered for durability and efficiency in demanding environments. The PRHMB200W12 specifically addresses applications requiring reliable high-power switching with compact form factors compared to discrete assemblies.
Public confirmed substitute part numbers are not available in the provided documentation.