Single FETs, MOSFETs PSMN005-25D,118 product image

PSMN005-25D,118

  • Description:MOSFET N-CH 25V 75A DPAK
  • Series:TrenchMOS™
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:ce2941f0ceb9 Category: Brand:

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PSMN005-25D,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 25V 75A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN005-25D,118

  • Description:MOSFET N-CH 25V 75A DPAK
  • Series:TrenchMOS™
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:5.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 5 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for PSMN005-25D,118

PSMN005-25D,118

Single FETs, MOSFETs Overview

The PSMN005-25D is an N-channel logic level TrenchMOS transistor manufactured by NXP USA Inc. It utilizes Philips Trench technology to achieve low on-state resistance and fast switching capabilities within a SOT428 (DPAK) surface-mount package. The device supports a drain-source voltage of 25 V and continuous drain currents up to 75 A at 25 °C, with a total power dissipation rating of 125 W. Electrical characteristics include a maximum RDS(ON) of 5.8 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 5 V.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench technology for minimized on-state resistance
  • Logic level compatible for direct drive applications
  • Fast switching performance suitable for high-frequency operation

Single FETs, MOSFETs Applications

  • DC to DC converters
  • Switched mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as the datasheet identifies Philips Semiconductors, while current distribution lists attribute the part to NXP USA Inc. Confirm the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS3 specifications and check for any product discontinuation notices or lifecycle status updates prior to finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in 25 V systems. Evaluate thermal management requirements based on the 125 W power dissipation limit and junction-to-mounting base thermal resistance. Verify that the gate drive voltage meets the logic level compatibility threshold to ensure optimal RDS(ON) performance under expected load conditions.

Single FETs, MOSFETs Part Context

This discrete semiconductor belongs to the TrenchMOS family, designed for efficient power switching. The SOT428 package provides a robust surface-mount solution for industrial and consumer electronics. The device integrates internal body diode characteristics essential for inductive load handling in standard bridge and buck converter topologies.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitutes. No public substitute part numbers are confirmed in the provided source material.

PSMN005-25D,118PSMN005-25D,118

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