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PSMN008-75B,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 75V 75A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PSMN008-75B,118
- Description：MOSFET N-CH 75V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：122.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5260 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：230W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for PSMN008-75B,118
Single FETs, MOSFETs Overview
The Nexperia PSMN008-75B,118 is an N-channel TrenchMOS SiliconMAX standard level Field-Effect Transistor (FET) housed in a SOT404 (D2PAK-3) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 8.5 mΩ at 25 °C and 20 mΩ at 175 °C. Total power dissipation reaches 230 W at 25 °C. Thermal resistance from junction to mounting base is typically 0.65 K/W. Gate threshold voltage ranges from 2 V to 4 V at 25 °C. The component supports a junction temperature up to 175 °C and includes avalanche ruggedness ratings.
Single FETs, MOSFETs Feature Summary
- Higher operating power capability due to low thermal resistance
- Low conduction losses resulting from minimized on-state resistance
- Rated for avalanche ruggedness to handle transient energy events
- Fast switching characteristics suitable for high frequency applications
Single FETs, MOSFETs Applications
- DC-to-DC converters
- Uninterruptible power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the application environment strictly adheres to the specified computing, communications, consumer, and industrial use cases. Ensure thermal management designs account for the stated junction-to-mounting base thermal resistance limits under actual load conditions.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities in a surface-mount D2PAK form factor. Consider the 75 V rating and low RDS(on) for efficient power conversion stages. Evaluate thermal performance based on the provided safe operating area curves and power dissipation limits relative to the PCB footprint.
Single FETs, MOSFETs Part Context
This part belongs to Nexperia's TrenchMOS SiliconMAX portfolio, utilizing advanced trench gate technology to enhance performance. The SiliconMAX series focuses on delivering superior power density and efficiency compared to standard MOSFETs. The SOT404 package provides a balance between electrical performance and thermal dissipation for surface-mount assembly.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for qualified alternatives. Cross-referencing requires matching voltage, current, and package specifications while verifying functional compatibility within the target circuit design constraints.
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