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The Nexperia PSMN011-60HLX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 35 A at 25 °C. The typical on-state resistance is 11.5 mΩ at VGS = 5 V and 25 °C, reducing to 10.7 mΩ at VGS = 10 V. Total gate charge is typically 24.5 nC. The device supports a junction temperature range from -55 °C to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required thermal and electrical constraints for the target application environment before finalizing procurement decisions.
Select this component for designs requiring dual independent N-channel switches in a compact surface-mount footprint. The logic level threshold allows direct driving from standard logic outputs. Ensure adequate heatsinking or PCB copper area is provided to manage thermal dissipation given the 68 W total power dissipation rating at 25 °C mounting base temperature.
This part belongs to Nexperia's PSMN series of TrenchMOS logic level MOSFETs. The LFPAK56D package provides enhanced thermal performance through a copper-clip solder die attach method. The dual configuration allows for space-efficient implementation of half-bridge or synchronous rectifier topologies in modern power electronics.
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and thermal characteristics when considering equivalent dual MOSFET packages.
No, unless explicitly stated in the data sheet, this product is not suitable for automotive use and has not been tested according to automotive requirements.
The peak drain current is 204 A for a single pulse duration of 10 µs or less at a mounting base temperature of 25 °C.
The typical RDS(on) increases from 11.5 mΩ at 25 °C to 21.5 mΩ at 175 °C when measured at VGS = 5 V and ID = 15 A.