PSMN011-80YS,115

$1.04

Description：MOSFET N-CH 80V 67A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:47669021c581 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN011-80YS,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 80V 67A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN011-80YS,115

Description：MOSFET N-CH 80V 67A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：117W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN011-80YS,115

PSMN011-80YS,115

Single FETs, MOSFETs Overview

The Nexperia PSMN011-80YS,115 is a standard level N-channel MOSFET utilizing Advanced TrenchMOS technology in an LFPAK (SOT669) plastic surface-mounted package. It features a drain-source voltage rating of 80 V and a continuous drain current of 67 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 11 mΩ at VGS=10V and ID=25A. Total power dissipation reaches 117 W under specified conditions, with a junction temperature range spanning from -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Advanced TrenchMOS technology delivers low on-state resistance and reduced gate charge for improved efficiency.
LFPAK packaging provides maximum power density within a Power SO8 footprint.
Enhanced mechanical and thermal characteristics support demanding industrial applications.

Single FETs, MOSFETs Applications

DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in compact form factors. The LFPAK package offers superior thermal performance compared to traditional Power SO8 packages. Ensure adequate heat sinking is provided to maintain junction temperatures within the specified operating range during high-load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's standard level N-channel MOSFET portfolio designed for industrial, communications, and domestic equipment. It utilizes silicon-based TrenchMOS technology optimized for switching power converters. The product is not automotive qualified unless explicitly stated in separate documentation.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without design modification.

Single FETs, MOSFETs FAQ

Is the PSMN011-80YS suitable for automotive applications?

No. Unless expressly stated otherwise in specific documentation, this product is not qualified or tested according to automotive standards and should not be used in automotive equipment.