PSMN013-40VLDX

Overview

The PSMN013-40VLD is a dual logic level N-channel MOSFET in an LFPAK56D package configured as a half-bridge. It utilizes NextPowerS3 technology to achieve low power losses and high power density. The device features an internal connection between the source of the high-side FET and the drain of the low-side FET, simplifying PCB layout. Key electrical parameters include a 40 V drain-source voltage rating, a typical on-state resistance of 11.35 mΩ at 25 °C, and a continuous drain current capability of 42 A.

Feature Summary

• Half-bridge configuration with internal source-drain interconnection for simplified design
• NextPowerS3 technology providing superior avalanche performance and low power losses
• LFPAK copper clip packaging ensuring high robustness and reliability
• Gull wing leads supporting high manufacturability and automated optical inspection

Applications

• Handheld power tools and portable appliances
• Brushless or brushed DC motor drive systems
• DC-to-DC conversion systems
• LED lighting applications

Procurement Notes

Verify the specific ordering suffix 'DX' against the manufacturer's latest documentation to confirm tape-and-reel specifications. Ensure the component meets the required thermal management standards for the intended mounting base temperature. Confirm that the application environment does not exceed the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this component for space-constrained designs requiring a pre-configured half-bridge topology. The logic level gate drive allows compatibility with standard control voltages. Evaluate the thermal resistance characteristics against the expected power dissipation requirements. Consider the footprint compatibility with existing LFPAK56D dual packages if transitioning from discrete solutions.

Part Context

This device belongs to Nexperia's LFPAK56D MOSFET series, which integrates two silicon dies into a single surface-mounted package. The half-bridge configuration reduces the overall component count and PCB area compared to using separate discrete MOSFETs. The series is designed for high-performance switching applications where efficiency and thermal management are critical.

Replacement Considerations

The datasheet notes footprint compatibility with the standard LFPAK56D Dual package. Verify pinout alignment and electrical parameters when substituting with other Nexperia half-bridge variants. Ensure any replacement maintains the required logic level gate drive characteristics and thermal performance.