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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 40A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Rds On (Max) @ Id, Vgs：10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2163pF @ 25V
- Power - Max：64W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：-
- Qualification：-
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Overview
The Nexperia PSMN013-60HSX is a dual standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 8 mΩ at 25 °C, rising to 18 mΩ at 175 °C junction temperature. Total power dissipation reaches 64 W under specified conditions. Key dynamic parameters include a total gate charge of 30.1 nC and non-repetitive avalanche energy of 82 mJ. Operating temperatures range from -55 °C to 175 °C.
Feature Summary
- Dual MOSFET configuration in a single leadless package
- Repetitive avalanche rated for robust switching performance
- High reliability copper-clip solder die attach construction
- Qualified for operation up to 175 °C junction temperature
Applications
- Brushless DC motor control
- DC-to-DC converters
- High-performance synchronous rectification
- High performance and high efficiency server power supply
Procurement Notes
Verify the specific suffix 'X' against official Nexperia documentation to confirm reel packaging specifications. Ensure the component matches the SOT1205 footprint requirements. Confirm that the application does not require automotive qualification, as this product is not explicitly stated as AEC-Q101 qualified. Validate thermal management designs against the provided transient thermal impedance data.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact surface-mount form factor. The low on-state resistance supports efficient power conversion in server and industrial environments. Consider the 175 °C rating for thermally demanding setups. Verify gate drive compatibility with the standard level threshold characteristics.
Part Context
This part belongs to Nexperia's NextPower L series of power MOSFETs designed for high-efficiency power management. The LFPAK56D package utilizes copper-clip technology to minimize thermal resistance compared to traditional plastic packages. This family targets dense PCB layouts where space constraints and heat dissipation are critical design factors.
Replacement Considerations
PSMN013-60BS,118
FAQ
What is the maximum non-repetitive avalanche energy?
The non-repetitive drain-source avalanche energy is 82 mJ when tested at ID = 40 A, Vsup ≤ 60 V, and initial junction temperature of 25 °C.
How does the on-state resistance change with temperature?
The typical RDSon increases from 8 mΩ at 25 °C to 18 mΩ at 175 °C junction temperature under standard test conditions.
Is this component suitable for automotive use?
No, unless explicitly stated otherwise in specific marketing materials, this product is not qualified to AEC-Q101 standards and is intended for general industrial or consumer applications.
