PSMN028-100HSX

$1.70

Description：MOSFET 2N-CH 100V 29A LFPAK56D
Series：-

SKU:78bea0f6638b Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 29A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：29A (Ta)
Rds On (Max) @ Id, Vgs：27.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2137pF @ 25V
Power - Max：64W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：-
Qualification：-

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PSMN028-100HSX

Overview

The PSMN028-100HS is a dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. It features a drain-source voltage of 100 V and a typical on-state resistance of 27.5 mΩ at 25 °C. The device supports a continuous drain current of 29 A and a peak pulsed current of 116 A. Total power dissipation reaches 64 W with a junction temperature range up to 175 °C. Key dynamic parameters include a total gate charge of 34 nC and a non-repetitive avalanche energy rating of 67 mJ.

Feature Summary

High peak drain current capability for demanding load conditions
Superior reliability through copper clip and flexible lead construction
Low body diode reverse recovery charge for improved efficiency
Operates at high junction temperatures up to 175 °C

Applications

Synchronous rectifier circuits
Forward and flyback converters
Industrial drive systems
Power management systems
Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix and marking code against the official Nexperia datasheet before procurement. Confirm that the LFPAK56D package variant matches the required footprint for your PCB design. Ensure the component status is listed as production data rather than preliminary or objective development stages. Check for any recent longevity program updates regarding expected order availability times.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount form factor. The standard level gate drive requires a 10 V gate-source voltage for optimal performance. Consider the thermal resistance characteristics and mounting base temperature limits for heat dissipation planning. Evaluate the avalanche ruggedness if the application involves inductive switching loads.

Part Context

This dual MOSFET utilizes Nexperia's TrenchMOS technology to achieve low conduction losses. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages. It is designed for industrial, communications, and domestic equipment applications requiring robust switching capabilities.