PSMN033-100HLX

Overview

The Nexperia PSMN033-100HL is a dual logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (Dual Power-SO8) package. It features a drain-source voltage of 100 V and a maximum continuous drain current of 26 A at 25 °C mounting base temperature. The device supports a peak pulsed drain current of 106 A and dissipates up to 64 W. On-state resistance is specified as 31 mΩ max at VGS = 10 V and 33 mΩ max at VGS = 5 V, both measured at 25 °C. Total gate charge is typically 27.3 nC. The component operates with a junction temperature range from -55 °C to 175 °C.

Feature Summary

• Dual configuration in a single LFPAK56D package for space-efficient designs
• Logic-level gate drive compatibility for direct microcontroller interfacing
• High thermal performance supporting operation up to 175 °C junction temperature
• Low body diode reverse recovery charge for improved efficiency

Applications

• Synchronous rectifier circuits
• Forward and flyback converters
• Industrial drive systems
• Power management systems
• Uninterruptible Power Supply (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and reel specifications. Confirm that the requested part number matches the exact electrical characteristics required for the target application. Ensure compliance with RoHS standards and check for any end-of-life notifications or longevity program updates prior to finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for logic-level switching applications. The LFPAK56D package offers superior thermal dissipation compared to standard SO-8 packages. Verify that the 100 V rating and 26 A current capacity align with the system's peak load requirements. Consider the low gate charge for high-frequency switching efficiency in power conversion topologies.

Part Context

This device belongs to Nexperia's NextPower L3 series of logic level MOSFETs. It utilizes TrenchMOS technology to achieve low on-state resistance and fast switching speeds. The dual configuration allows for independent control of two channels within a single footprint, reducing board space and simplifying assembly in dense power electronics designs.

Replacement Considerations

PSMN033-100HLS

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

Is this device automotive qualified?

No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and is not qualified according to automotive testing requirements.

What is the package type?

The device is housed in an LFPAK56D (Dual Power-SO8) plastic surface-mounted package, also known as SOT1205.