PSMN2R1-30YLEX

$1.37

Description：PSMN2R1-30YLE/SOT669/LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9120548b59ca Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN2R1-30YLEX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PSMN2R1-30YLE/SOT669/LFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN2R1-30YLEX

Description：PSMN2R1-30YLE/SOT669/LFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：2.17mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3749 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：124W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN2R1-30YLEX

PSMN2R1-30YLEX

Single FETs, MOSFETs Overview

The Nexperia PSMN2R1-30YLEX is an N-channel enhancement mode ASFET designed for hot-swap applications with enhanced Safe Operating Area (SOA). It operates within a drain-source voltage range of up to 30 V and supports continuous drain currents reaching 160 A. The device features a typical on-state resistance of 2.17 mΩ at VGS = 10 V, ensuring low conduction losses. Packaged in the LFPAK56 (SOT669) format, it offers high power density and reliability suitable for demanding thermal environments.

Single FETs, MOSFETs Feature Summary

Fully optimized Safe Operating Area (SOA) for superior linear mode operation
LFPAK56 package providing high performance and reliability in a compact footprint
Copper-clip construction for low parasitic inductance and resistance

Single FETs, MOSFETs Applications

Hot swap in 12 V - 20 V applications
e-Fuse implementations
DC switch circuits
Load switch designs
Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging configuration. Confirm that the component meets all required environmental compliance standards for the target application before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust linear mode capability alongside low conduction losses. The enhanced SOA makes it suitable for managing inrush currents during hot-swap events without risking device failure under stress conditions.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPowerS3 portfolio, utilizing advanced silicon technology to deliver high efficiency. It is engineered specifically for applications demanding strong safe operating area characteristics and reliable performance in power management roles.