PSMN4R2-40VSHX

Overview

The Nexperia PSMN4R2-40VSH is a dual N-channel MOSFET in an LFPAK56D package configured as a half-bridge. It utilizes NextPowerS3 technology to achieve low power losses and high power density. The device features a drain-source voltage of 40 V, a typical on-state resistance of 4.2 mΩ at 10 V gate drive, and a continuous drain current capability of 98 A at 25 °C mounting base temperature. Total power dissipation reaches 85 W under specified conditions.

Feature Summary

• Internal connection between the high-side source and low-side drain simplifies half-bridge switching applications.
• NextPowerS3 technology provides superior avalanche performance with repetitive avalanche rating.
• LFPAK copper clip packaging ensures high robustness, reliability, and reduced thermal resistance.
• Gull wing leads support high manufacturability and enable visual Automated Optical Inspection.

Applications

• Handheld power tools and portable appliances
• Brushless or brushed DC motor drives
• DC-to-DC conversion systems

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration for automated assembly. Confirm that the application environment remains within the specified junction temperature limits of -55 °C to +175 °C. Ensure PCB layout adheres to the recommended footprint dimensions to maintain thermal performance and electrical integrity during soldering processes.

Selection Notes

Select this component for space-constrained designs requiring integrated half-bridge functionality. The LFPAK56D footprint offers compatibility with existing dual packages while reducing component count. Evaluate thermal management requirements against the 85 W total power dissipation limit and ensure gate drive voltages align with the standard level specifications for optimal RDSon performance.

Part Context

This device belongs to Nexperia's NextPowerS3 family, designed for high-efficiency power switching. The LFPAK56D package integrates two silicon dies into a single surface-mount form factor. This configuration reduces parasitic inductance and improves system-level thermal resistance compared to discrete solutions, supporting higher efficiency in PWM applications.

Replacement Considerations

The datasheet notes footprint compatibility with the LFPAK56D Dual package. Verify pinout alignment and electrical parameters when substituting other dual N-channel MOSFETs in the same package style to ensure circuit functionality remains intact.

FAQ

What is the internal configuration of the PSMN4R2-40VSH?

The device connects the source of the high-side FET (S1) directly to the drain of the low-side FET (D2), creating a half-bridge configuration ideal for switching applications.

Is the PSMN4R2-40VSH rated for repetitive avalanche events?

Yes, the device is repetitively avalanche rated, providing superior avalanche performance due to the NextPowerS3 technology used in its construction.

How does the LFPAK56D package benefit manufacturing?

The package features gull wing leads that absorb mechanical stress during thermal cycling and allow for visual Automated Optical Inspection (AOI) of solder joints without requiring expensive X-ray equipment.