PSMN5R8-40YS,115

$1.00

Description：MOSFET N-CH 40V 90A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:98ca20e49e09 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN5R8-40YS,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 40V 90A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN5R8-40YS,115

Description：MOSFET N-CH 40V 90A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：28.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1703 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：89W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN5R8-40YS,115

PSMN5R8-40YS,115

Single FETs, MOSFETs Overview

The Nexperia PSMN5R8-40YS,115 is a standard level N-channel MOSFET utilizing Advanced TrenchMOS technology housed in an LFPAK (SOT669) surface-mount package. It features a drain-source voltage rating of 40 V and supports a continuous drain current of 90 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 7.7 mΩ at 100 °C and 5.7 mΩ at 25 °C. Total gate charge is typically 28.8 nC. It operates within a junction temperature range of -55 °C to 175 °C with a total power dissipation capacity of 89 W.

Single FETs, MOSFETs Feature Summary

Advanced TrenchMOS technology delivers low on-state resistance and reduced gate charge for improved switching efficiency.
LFPAK packaging provides enhanced thermal performance and mechanical robustness while maximizing power density.
Qualified for operation up to 175 °C junction temperature for demanding industrial environments.

Single FETs, MOSFETs Applications

DC-to-DC converters
Lithium-ion battery protection circuits
Load switching applications
Motor control systems
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 40 V N-channel MOSFET with high current handling capabilities in a compact surface-mount form factor. Ensure the application environment allows for adequate heat sinking to manage the 89 W power dissipation rating. Confirm that the gate drive voltage aligns with the standard level gate requirements for optimal RDSon performance.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PSMN series of standard level N-channel MOSFETs. These devices are engineered using TrenchMOS technology to balance conduction losses and switching speeds. The LFPAK package variant offers superior thermal characteristics compared to traditional plastic packages, making it suitable for high-density PCB layouts in power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pin compatibility or generic electrical ratings without verifying package dimensions and thermal resistance specifications.

Single FETs, MOSFETs FAQ

Is the PSMN5R8-40YS automotive qualified?

No. Unless explicitly stated in the data sheet, this product is not automotive qualified and should not be used in automotive equipment or applications beyond standard specifications.