PSMN6R8-40HSX

Overview

The Nexperia PSMN6R8-40HS is a dual standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.8 mΩ at 25 °C and 13.4 mΩ at 175 °C, with a total power dissipation capability of 64 W. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration in a single LFPAK56D plastic surface-mounted package
• Repetitive avalanche rated for robust performance under transient conditions
• High reliability construction featuring copper-clip and solder die attach
• Qualified for operation at elevated junction temperatures up to 175 °C

Applications

• Brushless DC motor control
• DC-to-DC converters
• High-performance synchronous rectification
• High efficiency server power supply

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel packaging specifications. Confirm that the LFPAK56D footprint aligns with the provided SOT1205 outline dimensions during PCB layout. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring dual N-channel switching in a compact form factor. The low on-state resistance minimizes conduction losses in high-current paths. Verify that gate drive voltages meet the standard level requirements for optimal RDS(on) performance. Consider the thermal characteristics when designing heat dissipation solutions for dense layouts.

Part Context

This device belongs to Nexperia's NextPower L series of power MOSFETs designed for industrial and communications equipment. It employs TrenchMOS technology to achieve high efficiency through reduced switching and conduction losses. The LFPAK56D package provides a space-saving solution suitable for demanding applications requiring high power density.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when evaluating potential replacements from other manufacturers.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 130 mJ when ID is 40 A, Vsup is less than or equal to 40 V, VGS is 10 V, and the initial junction temperature is 25 °C.

How does the on-state resistance vary with temperature?

The typical on-state resistance increases from 5.8 mΩ at 25 °C to 11 mΩ at 175 °C under standard test conditions of VGS = 10 V and ID = 20 A.

What are the dynamic characteristics regarding gate charge?

The total gate charge is typically 28.9 nC, while the gate-drain charge is typically 9.1 nC, measured at ID = 20 A, VDS = 32 V, and VGS = 10 V or 20 V respectively.