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PSMQE096N10LS2_R2_00601 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is EXCELLENT FOM / 100V/9.6M / DFN3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PSMQE096N10LS2_R2_00601
- Description：EXCELLENT FOM / 100V/9.6M / DFN3
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for PSMQE096N10LS2_R2_00601
Single FETs, MOSFETs Overview
The PSMQE096N10LS2_R2_00601 is a single N-Channel enhancement mode MOSFET manufactured by Panjit International Inc. utilizing silicon technology. It features a DFN3333S-8L surface-mount package designed for high-efficiency power switching applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 50.1 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 9.6 mΩ, with a gate charge (Qg) of 24 nC and threshold voltage (Vgs(th)) of 2.3 V. It supports a maximum power dissipation of 53.6 W and operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Optimized figure of merit (FOM) for improved switching efficiency
- Low on-resistance for reduced conduction losses
- High thermal stability with extended operating temperature range
Single FETs, MOSFETs Applications
- Power delivery network solutions
- DC-DC converter circuits
- General purpose power switching
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix R2_00601 against the manufacturer's latest datasheet to confirm exact reel specifications and tape-and-reel dimensions. Ensure compatibility with standard SMD assembly processes for the DFN3333S-8L footprint. Confirm RoHS compliance status through official documentation prior to integration into regulated assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and low Rds(on) are required in a compact DFN3333S-8L package. Consider the 50.1 A current capability and 53.6 W power dissipation limits relative to your thermal management strategy. Evaluate the 24 nC gate charge against your driver capabilities to ensure adequate switching speeds without excessive drive current requirements.
Single FETs, MOSFETs Part Context
This part belongs to the PSMQE series from Panjit, which focuses on N-Channel MOSFETs optimized for excellent figure of merit. The series targets modern power electronics requiring high density and efficiency. The DFN3333S-8L package provides a balance between thermal performance and board space savings compared to traditional leaded packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Panjit PSMQE series devices sharing the DFN3333S-8L package and 100 V rating. Verify pinout compatibility and thermal pad configuration before substitution. Check if alternative parts offer lower Rds(on) or different current ratings that better suit specific thermal constraints.
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