PTF080101M V1

Overview

The PTF080101M is a high-power RF LDMOS FET designed for base station applications in the 450 MHz to 960 MHz band. It delivers 10 W output power with a drain-source breakdown voltage of 65 V and operates at a junction temperature up to 150 °C. The device features an on-state resistance of 0.83 Ω, total device dissipation of 18.8 W, and thermal resistance of 6.5 °C/W. It utilizes the PG-RFP-10 package and includes integrated ESD protection.

Feature Summary

• Integrated ESD protection meeting Human Body Model Class 1 standards
• Excellent thermal stability and low HCI drift characteristics
• Capable of handling 10:1 VSWR at 28 V and 10 W CW output power

Applications

• Class AB base station amplifiers
• EDGE cellular network infrastructure
• Broadband RF power amplification

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific unit matches the PG-RFP-10 package outline and marking code '0081'. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly due to the device's sensitivity.

Selection Notes

Select this component for designs requiring robust performance in the 450–960 MHz range. Consider the 6.5 °C/W thermal resistance for heat sink sizing and the 18.8 W total dissipation limit. Verify compatibility with the required 28 V supply voltage and ensure the PCB layout accommodates the specific impedance matching networks detailed in the reference schematic.

Part Context

This part belongs to Infineon’s GOLDMOS® family of unmatched high-power RF transistors. It is specifically engineered for telecommunications infrastructure, providing a balance of gain, efficiency, and linearity. The technology supports reliable operation in demanding base station environments where thermal management and signal integrity are critical.

Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.