ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V H-32259-2
- Series：GOLDMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：960MHz
- Gain：18.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：1µA
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：10W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：H-32259-2
- Supplier Device Package：H-32259-2
- Configuration：-
Download product information
Overview
The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. It features thermally-enhanced packaging and full gold metallization for reliability. Key RF characteristics include an average output power of 5 W with 18.5 dB gain and 38% efficiency at 28 V. CW performance reaches 13 W output at P-1dB with 17.5 dB gain and 55% efficiency. The device has a drain-source breakdown voltage of 65 V and operates up to a junction temperature of 200 °C.
Feature Summary
- Thermally-enhanced packaging for optimal heat dissipation
- Broadband internal matching across the 860–960 MHz range
- Integrated ESD protection meeting Human Body Model Class 1 standards
- Excellent thermal stability and low HCI drift
Applications
- EDGE cellular base station amplifiers
- CDMA cellular base station amplifiers
- High-power RF linear amplifier stages
Procurement Notes
Verify component authenticity through authorized Infineon distributors or direct channels. Confirm package integrity upon receipt, as the thermally-enhanced SMD design requires careful handling. Ensure storage conditions align with manufacturer guidelines to maintain device reliability before assembly into production circuits.
Selection Notes
Select this component for designs requiring high linearity and efficiency in the 860–960 MHz spectrum. Consider the 28 V operating voltage and 150 mA quiescent current requirements. Evaluate PCB layout against the provided reference schematic to ensure impedance matching and thermal management meet system specifications.
Part Context
This part belongs to Infineon's GOLDMOS family of LDMOS transistors. It utilizes advanced trench technology optimized for high power density. The device is designed to replace older generation MOSFETs in wireless infrastructure, offering improved thermal performance and robustness against load mismatches.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) is rated at 65 V.
Does the device support high VSWR loads?
Yes, it is capable of handling a 10:1 VSWR at 28 V with 10 W CW output power.
What is the typical gate-source voltage during operation?
The typical operating gate-source voltage (VGS) is 3.2 V when VDS is 28 V and IDQ is 150 mA.
