SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTFA041501F-V4-R250 is a 150-watt LDMOS FET designed for ultra-linear CDMA power amplifier applications. It operates in the 420–500 MHz frequency range and utilizes Infineon's advanced LDMOS process. The device features broadband internal matching and integrated ESD protection (Human Body Model, Class 1). It is housed in a thermally-enhanced ceramic open-cavity package (H-37248-2) with an earless flange configuration.
Verify that the ordering suffix V4-R250 corresponds to the Tape & Reel shipping format containing 250 pieces. Confirm the H-37248-2 earless flange package type matches the design requirements. Ensure handling precautions are observed as the device is electrostatic discharge sensitive.
Select this component for high-power RF applications requiring superior reliability and thermal performance. The device provides excellent linearity and efficiency at 470 MHz under typical operating conditions. Consider the specific impedance requirements for source and load matching when designing the circuit.
This part belongs to the PTFA041501 series of thermally-enhanced high power RF LDMOS FETs. Manufactured using Infineon's advanced LDMOS process, these devices offer robust performance for demanding wireless communication infrastructure. The series includes variants with different packaging options to suit various assembly needs.
PTFA041501E-V4-R250 is a verified substitute within the same product family. It shares identical electrical characteristics but utilizes the H-36248-2 slotted flange package instead of the earless flange.