PTFA080551E-V4-R0

Overview

The PTFA080551E-V4-R0 is a 55-watt LDMOS FET designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. It operates with a 28 V supply and delivers 450 mA current. The device provides 18.5 dB gain within the specified frequency range of 869 MHz to 960 MHz.

Feature Summary

• Engineered as a high-power LDMOS transistor optimized for cellular base station power amplification
• Designed specifically for EDGE and CDMA modulation schemes in the UHF spectrum
• Features a robust H-36265-2 package suitable for thermal management in RF modules

Applications

• EDGE power amplifier modules
• CDMA power amplifier modules
• UHF band cellular infrastructure equipment

Procurement Notes

Verify the specific suffix (V4-R0) against the manufacturer's latest datasheet revision history to ensure component compatibility. Confirm that the H-36265-2 package dimensions match the target PCB footprint. Ensure the supplier provides traceability documentation consistent with MACOM Technology Solutions standards for RF semiconductor components.

Selection Notes

Select this component when designing power amplifiers for EDGE or CDMA networks operating between 869 and 960 MHz. The 55-watt output capability and 18.5 dB gain make it suitable for mid-range coverage scenarios. Consider thermal dissipation requirements due to the LDMOS technology and verify biasing circuits align with the 28 V operational specification.

Part Context

This part belongs to MACOM’s portfolio of discrete RF transistors, specifically the PTFA series of LDMOS devices. These components are engineered for high-efficiency power amplification in wireless communication infrastructure. The PTFA080551E variant represents a specific generation optimized for UHF band operations, distinct from other MACOM RF FETs covering different frequency ranges or power levels.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence carefully if considering alternative LDMOS devices from other manufacturers, ensuring matching voltage, current, and frequency specifications.