SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTFA180701E-V4-R250 is a 70-watt LDMOS FET designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Typical EDGE performance includes 44 dBm average output power, 16.5 dB gain, 40.5% efficiency, and 2.0% EVM. CW performance delivers 72 W at P–1dB with 15.5 dB gain and 59% efficiency. The device integrates Human Body Model Class 2 ESD protection and handles 10:1 VSWR at 28 V and 70 W.
Verify component authenticity through authorized Infineon distributors. Confirm package type matches application requirements. Review handling precautions due to ESD sensitivity. Ensure thermal management meets specified dissipation limits. Validate operating conditions against maximum ratings.
Select based on required frequency band coverage within 1805-1880 MHz range. Consider thermal resistance specifications for heat sink design. Evaluate package options for mechanical integration constraints. Verify bias voltage compatibility with system power supply. Assess modulation requirements against typical performance data.
This LDMOS transistor belongs to the high-power RF semiconductor category manufactured using advanced processes. It serves as a critical active component in cellular base station transmitter chains. The device represents a mature technology platform optimized for reliability and thermal performance in wireless infrastructure applications.
Consult Infineon distributor for future availability status. Verify pinout compatibility before substitution. Check thermal resistance values match existing heatsink designs. Confirm package dimensions fit current PCB layout constraints.