PTFA180701E-V4-R250

PTFA180701E-V4-R250

$44.97
  • Description:RF MOSFET LDMOS 28V H-36265-2
  • Series:-

SKU:cad769802f65 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-36265-2
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.84GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:550 mA
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36265-2
  • Supplier Device Package:H-36265-2
  • Configuration:-

Download product information

PTFA180701E-V4-R250

Overview

The PTFA180701E-V4-R250 is a 70-watt LDMOS FET designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Typical EDGE performance includes 44 dBm average output power, 16.5 dB gain, 40.5% efficiency, and 2.0% EVM. CW performance delivers 72 W at P–1dB with 15.5 dB gain and 59% efficiency. The device integrates Human Body Model Class 2 ESD protection and handles 10:1 VSWR at 28 V and 70 W.

Feature Summary

  • Thermally-enhanced package construction with integrated ESD protection
  • Broadband internal matching for simplified circuit design
  • High thermal stability with low HCI drift characteristics

Applications

  • GSM power amplifiers
  • GSM EDGE power amplifiers

Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm package type matches application requirements. Review handling precautions due to ESD sensitivity. Ensure thermal management meets specified dissipation limits. Validate operating conditions against maximum ratings.

Selection Notes

Select based on required frequency band coverage within 1805-1880 MHz range. Consider thermal resistance specifications for heat sink design. Evaluate package options for mechanical integration constraints. Verify bias voltage compatibility with system power supply. Assess modulation requirements against typical performance data.

Part Context

This LDMOS transistor belongs to the high-power RF semiconductor category manufactured using advanced processes. It serves as a critical active component in cellular base station transmitter chains. The device represents a mature technology platform optimized for reliability and thermal performance in wireless infrastructure applications.

Replacement Considerations

Consult Infineon distributor for future availability status. Verify pinout compatibility before substitution. Check thermal resistance values match existing heatsink designs. Confirm package dimensions fit current PCB layout constraints.

PTFA180701E-V4-R250PTFA180701E-V4-R250
$44.97
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