PTFA181001EV4R250XTMA1

Overview

The PTFA181001EV4R250XTMA1 is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the DCS band. It operates within the 1805–1880 MHz frequency range. The device features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Manufactured using Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability.

Feature Summary

• Thermally-enhanced packages with slotted or earless flanges
• Broadband internal matching
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift

Applications

• EDGE power amplifier applications
• WCDMA power amplifier applications
• DCS band amplification

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct package type and reel specifications. Confirm current availability status directly with authorized distributors, as supply conditions may vary. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity.

Selection Notes

Select this component for high-power RF applications requiring linear gain and efficiency in the 1805–1880 MHz range. Consider the specific package variant (slotted vs. earless flange) based on mechanical mounting requirements. Evaluate thermal management solutions to maintain junction temperature within specified limits during operation.

Part Context

This part belongs to Infineon's GoldMOS series of high-power RF LDMOS transistors. It is specifically engineered for cellular base station power amplifiers operating in the DCS band. The V4 designation indicates an updated version with enhanced package technologies compared to earlier iterations.

Replacement Considerations

PTFA181001E and PTFA181001F are the base model numbers. Verify compatibility with existing circuit designs when substituting between the slotted flange (E) and earless flange (F) variants.