PTFA181001EV4XWSA1

PTFA181001EV4XWSA1

$66.38
  • Description:RF MOSFET LDMOS 28V H-36248-2
  • Series:-

SKU:f33b3d32ac63 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-36248-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.88GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:100W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:2-FlatPack, Fin Leads
  • Supplier Device Package:H-36248-2
  • Configuration:-

Download product information

PTFA181001EV4XWSA1

Overview

The PTFA181001EV4XWSA1 is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the DCS band (1805–1880 MHz). It features thermally-enhanced packages with slotted or earless flanges. Typical CW performance at 1880 MHz and 28 V includes an output power of 120 W at P-1dB, gain of 15.5 dB, and efficiency of 52%. In EDGE measurements at 1879.8 MHz, it delivers 45 W average output power with 16.5 dB linear gain, 36% efficiency, and 1.8% RMS EVM.

Feature Summary

  • Thermally-enhanced packages with slotted or earless flanges
  • Broadband internal matching
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift

Applications

  • EDGE power amplifiers
  • WCDMA power amplifiers
  • DCS band RF circuits

Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm package variant matches design requirements, as the E suffix denotes a slotted flange while the F suffix indicates an earless flange. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Check current availability status directly with the manufacturer or official supply channels.

Selection Notes

Select based on required package type; the E version uses H-36248-2 with a slotted flange, whereas the F version utilizes H-37248-2 with an earless flange. Both variants share identical electrical characteristics and are suitable for broadband applications within the specified frequency range. Consider thermal management capabilities when designing heat sinks for continuous wave operations.

Part Context

This component belongs to Infineon's Thermally-Enhanced High Power RF LDMOS FETs series. These devices are manufactured using advanced LDMOS processes to provide superior reliability and excellent thermal performance. The family targets single-carrier and multi-carrier wireless communication systems requiring high linearity and efficiency.

Replacement Considerations

PTFA181001E serves as the direct equivalent for the slotted flange configuration. PTFA181001F is the corresponding alternative for the earless flange setup. Verify pinout compatibility and mounting dimensions before substituting either variant in existing designs.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) is rated at 65 V.

Does the device support IS-95 CDMA standards?

Yes, the datasheet provides specific performance data for IS-95 CDMA applications at 1880 MHz.

What is the typical junction temperature limit?

The maximum Junction Temperature (TJ) is specified as 200 °C.

PTFA181001EV4XWSA1PTFA181001EV4XWSA1
$66.38
Buy Now