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The PTFA192001EV4XWSA1 is a discontinued RF LDMOS FET manufactured by Infineon Technologies. It operates in the 1930 to 1990 MHz frequency band with a drain-source breakdown voltage of 65 V and a typical linear gain of 15.9 dB. The device delivers an average output power of 50 W under two-carrier WCDMA conditions at 1990 MHz, or up to 240 W at P-1dB under continuous wave operation at 1960 MHz. It utilizes the H-36260-2 thermally enhanced package with a slotted flange for single-ended mounting.
This component is officially marked as a discontinued product by Infineon Technologies. Verify current availability status through authorized distributors before initiating procurement processes. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with handling precautions due to electrostatic discharge sensitivity during storage and installation.
Select this component for base station designs requiring high linearity and efficiency within the 1930 to 1990 MHz spectrum. The integrated broadband matching simplifies circuit design compared to discrete alternatives. Evaluate thermal management requirements carefully, as the device relies on direct case cooling through the slotted flange interface for optimal performance under high power loads.
Infineon Technologies produces this LDMOS FET using advanced semiconductor processes optimized for high-power radio frequency applications. The device belongs to a family of thermally enhanced RF transistors designed to provide superior reliability and consistent performance in demanding wireless communication infrastructure environments.
Public confirmed substitute part numbers are not available for this discontinued model. Consider evaluating newer generation LDMOS devices from the manufacturer or alternative suppliers offering compatible electrical parameters and package dimensions for retrofitting existing hardware designs.