PTFA192001EV4XWSA1

PTFA192001EV4XWSA1

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-

SKU:5e774464286b Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.99GHz
  • Gain:15.9dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.8 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

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PTFA192001EV4XWSA1

Overview

The PTFA192001EV4XWSA1 is a discontinued RF LDMOS FET manufactured by Infineon Technologies. It operates in the 1930 to 1990 MHz frequency band with a drain-source breakdown voltage of 65 V and a typical linear gain of 15.9 dB. The device delivers an average output power of 50 W under two-carrier WCDMA conditions at 1990 MHz, or up to 240 W at P-1dB under continuous wave operation at 1960 MHz. It utilizes the H-36260-2 thermally enhanced package with a slotted flange for single-ended mounting.

Feature Summary

  • Broadband internal matching designed for single- and two-carrier WCDMA applications
  • Thermally enhanced package construction with a slotted flange for efficient heat dissipation
  • Integrated electrostatic discharge protection rated at Human Body Model Class 2 minimum
  • High reliability performance characterized by excellent thermal stability and low HCI drift

Applications

  • Single-carrier WCDMA power amplifier stages
  • Two-carrier WCDMA drive-up configurations
  • CDMA signal amplification systems

Procurement Notes

This component is officially marked as a discontinued product by Infineon Technologies. Verify current availability status through authorized distributors before initiating procurement processes. Confirm that the specific ordering suffix matches the required package variant. Ensure compliance with handling precautions due to electrostatic discharge sensitivity during storage and installation.

Selection Notes

Select this component for base station designs requiring high linearity and efficiency within the 1930 to 1990 MHz spectrum. The integrated broadband matching simplifies circuit design compared to discrete alternatives. Evaluate thermal management requirements carefully, as the device relies on direct case cooling through the slotted flange interface for optimal performance under high power loads.

Part Context

Infineon Technologies produces this LDMOS FET using advanced semiconductor processes optimized for high-power radio frequency applications. The device belongs to a family of thermally enhanced RF transistors designed to provide superior reliability and consistent performance in demanding wireless communication infrastructure environments.

Replacement Considerations

Public confirmed substitute part numbers are not available for this discontinued model. Consider evaluating newer generation LDMOS devices from the manufacturer or alternative suppliers offering compatible electrical parameters and package dimensions for retrofitting existing hardware designs.

PTFA192001EV4XWSA1PTFA192001EV4XWSA1

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