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The PTFB182557SH-V1-R250 is a 250-watt LDMOS FET designed for cellular power amplifier applications. It operates in the 1805 MHz band and utilizes an H-33288-6 package configuration. The device is specifically engineered to support Doherty amplifier architectures, providing high linearity and efficiency for base station transmitters.
Verify the complete part number including the suffix -V1-R250 against official MACOM documentation to ensure correct revision and packaging. Confirm that the H-33288-6 package type matches your board layout requirements. Cross-reference the datasheet revision date with your design specifications to ensure compatibility with current manufacturing standards.
Select this component when designing Doherty architecture amplifiers requiring 250 watts of output power at 1805 MHz. Ensure thermal management solutions accommodate the specific package footprint. Validate impedance matching networks against the provided S-parameter data in the official datasheet for optimal gain and efficiency performance.
This RF MOSFET belongs to MACOM's portfolio of LDMOS devices tailored for telecommunications infrastructure. It supports high-power applications in cellular base stations, addressing the demand for efficient signal amplification in modern wireless networks while maintaining strict linearity requirements.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official MACOM resources for potential cross-references or updated series replacements.