PTFB192557SHV1R250XTMA1

Overview

The PTFB192557SH is a 250-watt LDMOS FET designed for Doherty cellular power amplifiers in the 1930 to 1990 MHz band. It provides 250 W output at P1dB with 55% efficiency and 18.6 dB gain at 1990 MHz, 28 V. Drain-source breakdown voltage is 65 V. Operating gate voltage ranges from 2.3 V to 3.3 V. Thermal resistance is 0.232 °C/W. The device features integrated ESD protection and handles 10:1 VSWR.

Feature Summary

• Optimized as a peak side transistor in Doherty amplifiers
• Features internal input and output matching networks
• Includes integrated electrostatic discharge (ESD) protection
• Capable of handling high voltage standing wave ratio (VSWR)

Applications

• Peak side transistor in Doherty cellular power amplifiers
• WCDMA base station applications
• Broadband RF power amplification

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and Pb-free status upon receipt. Ensure proper ESD handling precautions are observed during storage and assembly. Check datasheet revision history for updates regarding design recommendations.

Selection Notes

Select this component specifically for Doherty amplifier architectures requiring high linearity and power density in the 1930-1990 MHz range. Consider thermal management capabilities given the 0.232 °C/W junction-to-case resistance. Evaluate compatibility with 28 V supply rails and required gate bias voltages for optimal performance.

Part Context

This part belongs to Infineon's high-power RF LDMOS family, engineered for demanding wireless infrastructure applications. It utilizes advanced LDMOS process technology to deliver superior reliability and thermal performance compared to standard discrete transistors.

Replacement Considerations

The datasheet explicitly states that the H-34288G-4/2 package is not recommended for new designs. Verify if newer packages within the same electrical specification family are available for replacement.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is 65 V.

Is the device suitable for single-carrier WCDMA signals?

Yes, it supports single-carrier WCDMA performance with specified gain and efficiency metrics at 1990 MHz.

What is the typical operating gate voltage?

The typical operating gate voltage (VGS) is 2.8 V, with a range of 2.3 V to 3.3 V.