PTFC260202FC-V1-R0

Overview

The PTFC260202FC-V1-R0 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. Constructed using silicon technology, this component operates within the frequency range of 2.495 GHz to 2.69 GHz. It features a drain-source breakdown voltage (Vds) of 65 V and a maximum gate-source voltage (Vgs) of +10 V. The device provides a typical gain of 20 dB and delivers an output power of 25 W. Its drain-source on-resistance (Rds On) is specified at 50 mOhms. Designed for surface mount installation, it utilizes the H-37248-4 package and supports a maximum operating temperature of +225 C.

Feature Summary

• Dual N-channel configuration utilizing silicon LDMOS technology for high-frequency performance
• Capable of delivering 25 W output power with 20 dB gain in the 2.495–2.69 GHz band
• Robust thermal capability supporting maximum junction temperatures up to +225 C
• Low on-resistance design optimized for efficient RF power amplification

Applications

• Broadband radio frequency power amplification
• Wireless communication infrastructure systems
• RF signal processing modules requiring high linearity

Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's current datasheet before procurement. Confirm that the H-37248-4 footprint matches your PCB layout requirements. Ensure thermal management solutions are adequate for the specified maximum operating temperature of +225 C. Cross-reference the RoHS compliance status with your project's environmental regulations. Validate the factory special order status if applicable to your supply chain timeline.

Selection Notes

Select this component when designing circuits for the 2.495 GHz to 2.69 GHz frequency range requiring 25 W output power. The dual N-channel structure allows for push-pull or balanced amplifier configurations. Consider the 50 mOhm on-resistance for efficiency calculations. The H-37248-4 package dictates the physical board space and thermal pad requirements. Ensure the driving circuit can provide the necessary +10 V gate-source voltage swing.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for wireless and microwave applications. It falls under the sub-category of MOSFETs within the broader RF power semiconductor market. The H-37248-4 package is a standard form factor for surface-mount RF power devices, facilitating integration into compact communication equipment. Silicon LDMOS technology offers a balance of performance and cost-effectiveness for mid-power RF applications.

Replacement Considerations

Consult MACOM official documentation for direct cross-references. Verify pinout compatibility and electrical parameters such as Vds, gain, and package dimensions before substituting.