PTFC262808FV-V1

Overview

The PTFC262808FV-V1 is a linear lateral diffused metal oxide semiconductor (LDMOS) field-effect transistor manufactured by MACOM Technology Solutions. Designed for high-power telecommunications applications, this device operates at a drain voltage of 28 V and delivers an output power of 280 W with a gain of 18 dB. It is optimized for broadband performance in cellular infrastructure environments.

Feature Summary

• High-efficiency LDMOS technology for robust RF power generation
• Optimized for linear amplification in wideband communication systems
• Designed for thermal stability and reliability in base station modules

Applications

• 4G LTE base station power amplifiers
• 5G NR infrastructure transmitters
• Broadband wireless communication systems

Procurement Notes

Verify the specific suffix variant against the manufacturer's current datasheet to ensure compatibility with system requirements. Confirm that the component meets all relevant environmental and export control classifications prior to integration into final designs.

Selection Notes

Select this component for applications requiring high linearity and substantial output power within a 28 V supply architecture. Ensure the design supports adequate thermal management to maintain performance under continuous wave conditions typical of cellular network deployments.

Part Context

This part belongs to MACOM’s portfolio of RF power semiconductors tailored for the telecommunications sector. The company specializes in GaAs and GaN MMIC technologies, providing scalable solutions for next-generation mobile networks and high-speed connectivity infrastructure globally.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly or authorized distributors for qualified alternatives.