PTVA123501EC-V2-R0

$355.87

Description：RF MOSFET LDMOS 50V H-36248-2
Series：-

SKU:19fdf8fba3ed Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V H-36248-2
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：1.2GHz ~ 1.4GHz
Gain：17dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：150 mA
Power - Output：350W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：2-FlatPack, Fin Leads
Supplier Device Package：H-36248-2
Configuration：-

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PTVA123501EC-V2-R0

Overview

The PTVA123501EC-V2-R0 is an RF MOSFET LDMOS device from MACOM Technology Solutions, designed for high-performance radio frequency amplification applications. It operates within the 1.2GHz to 1.4GHz frequency range and delivers a gain of 17dB. The component features a 50V drain-source breakdown voltage and supports a continuous drain current of 150mA. Packaged in the H-36248-2 format, it integrates broadband internal input and output matching networks alongside integrated ESD protection compliant with Human Body Model Class 2 standards.

Feature Summary

High gain and efficiency performance optimized for RF amplification
Broadband internal input and output matching integration
Integrated ESD protection meeting Human Body Model Class 2 standards

Applications

Radio frequency amplification systems
Broadband RF signal processing
High-efficiency transmitter stages

Procurement Notes

Verify the exact suffix against official documentation, as variations like -R250 or -R2 exist. Confirm package type H-36248-2 matches design requirements. Ensure ESD handling protocols align with Class 2 specifications during assembly. Cross-reference datasheet parameters for 1.2GHz to 1.4GHz operation before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring 17dB gain within the 1.2GHz to 1.4GHz band. Consider the 50V breakdown voltage and 150mA current limits for power budgeting. The integrated matching simplifies design complexity. Verify thermal management needs for the H-36248-2 package in high-power scenarios.

Part Context

This part belongs to MACOM's portfolio of RF MOSFETs utilizing LDMOS technology. It complements other discrete RF devices and modules offered by the manufacturer. The product line targets demanding RF applications where high efficiency and integrated protection are critical for system reliability and performance stability.