PXAC192908FV-V1-R0

Overview

The PXAC192908FV-V1-R0 is an RF LDMOS transistor manufactured by MACOM Technology Solutions. It is housed in a surface-mount package designed for high-frequency applications. The component functions as a radio frequency field-effect transistor, supporting operations within the RF spectrum. It is classified under RF FETs and MOSFETs, intended for amplification tasks in wireless communication systems.

Feature Summary

• Lateral Diffused Metal-Oxide-Semiconductor (LDMOS) architecture for RF power amplification
• Surface-mount device (SMD) form factor for automated assembly
• RoHS compliant construction

Applications

• RF power amplification in wireless infrastructure
• Base station transmitter modules
• Broadband RF signal processing circuits

Procurement Notes

Verify the specific suffix R0 against the manufacturer's current datasheet to confirm pinout and electrical characteristics. Ensure compatibility with existing PCB footprints and thermal management requirements. Confirm RoHS compliance status with the supplier. Check for any recent product change notices that may affect performance or availability.

Selection Notes

Select this component for designs requiring robust RF power handling in a compact SMD package. Consider the thermal resistance and maximum operating frequency limits relative to the target application bandwidth. Evaluate the need for impedance matching networks based on the transistor's input and output impedances at the desired operating frequency.

Part Context

This part belongs to MACOM's portfolio of RF discrete semiconductors. It complements other LDMOS devices used in cellular and broadcast infrastructure. The family focuses on providing reliable gain and linearity for RF front-end modules in modern communication standards.