PXAC210552FC-V1-R2

Overview

The PXAC210552FC-V1-R2 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the frequency range of 1.805 GHz to 2.17 GHz, delivering an output power of 55 W with a gain of 17.2 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a maximum operating temperature of +225 C. Packaged in the H-37248-4 surface-mount format on a reel, it utilizes silicon technology and supports a gate-source voltage of +10 V.

Feature Summary

• Dual N-channel configuration for balanced RF performance
• High thermal stability supporting operation up to +225 C
• Silicon-based LDMOS construction for robust RF power handling

Applications

• RF power amplification in cellular base stations
• Broadband communication systems operating in the 1.8–2.2 GHz band
• Industrial RF heating and plasma generation equipment

Procurement Notes

Verify the specific suffix 'R2' against official MACOM documentation to confirm tape-and-reel specifications and packaging details. Ensure compatibility with existing PCB footprints designated for the H-37248-4 package. Cross-reference lead times and availability directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Confirm RoHS compliance status through current datasheets before integration into regulated products.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the 1.805–2.17 GHz range. The 55 W output capability suits applications demanding significant power density without excessive heat dissipation infrastructure. Consider the dual-channel architecture for push-pull amplifier topologies to improve harmonic rejection. Evaluate the 65 V breakdown limit against system voltage requirements to ensure safe operational margins under transient conditions.

Part Context

This part belongs to MACOM's portfolio of RF MOSFET transistors designed for telecommunications and industrial sectors. It complements other LDMOS devices offering varying power levels and frequency ranges. The H-37248-4 package standardizes mounting across multiple MACOM product lines, facilitating design reuse. As a silicon-based solution, it provides a cost-effective alternative to GaN technologies for mid-power RF applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify functional equivalence with other MACOM dual-channel LDMOS FETs only through direct datasheet comparison of electrical parameters and pinout configurations.