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The PXAC260602FC-V1-R250 is an RF LDMOS FET from MACOM Technology Solutions, designed for high-frequency applications. It operates within a frequency range of 2.62 GHz to 2.69 GHz. Key electrical specifications include a Drain-Source Breakdown Voltage (Vds) of 65 V and a Drain-Source Resistance (Rds On) of 800 mOhms. The device supports an output power of 5W with a gain of 15.7dB. It is packaged in Tape & Reel (TR) format.
Verify the part status as Active or Obsolete through official manufacturer channels before procurement. Confirm that the Tape & Reel packaging aligns with automated assembly requirements. Ensure compatibility with the specified 65V breakdown voltage and 800 mOhm resistance parameters for your specific circuit design. Cross-reference the exact suffix -V1-R250 to guarantee correct variant selection.
Select this component when a 5W output power at 2.62-2.69 GHz is required. Consider the 65V Vds rating for voltage headroom. Evaluate the 800 mOhm Rds On for thermal management needs. Compare against other MACOM RF MOSFETs if different power levels or frequencies are needed. Ensure the H-37248-4 package fits the PCB layout constraints.
This part belongs to MACOM's portfolio of RF MOSFET transistors. It is distinct from general-purpose amplifiers like the MAAM series or GaN devices like the MAGX series. The PXAC series focuses on discrete RF FET solutions for specific frequency bands, differing from integrated amplifier modules.
Publicly confirmed substitute part numbers are not available in the provided documentation. Check MACOM's official replacement guides for equivalent LDMOS FETs with similar 5W output and 2.6GHz frequency characteristics.