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The PXFC192207SHV1R250XTMA1 is an RF MOSFET transistor from Infineon Technologies, designed for high-power applications. It operates at a maximum drain-source voltage of 75 V and supports a continuous drain current up to 130 A. The device features a low on-resistance of 7.8 mΩ and a thermal resistance junction-to-case of 0.45 K/W. Packaged in TO-220, it utilizes silicon technology and is suitable for synchronous rectification and power conversion systems requiring robust performance.
Verify the exact part number PXFC192207SHV1R250XTMA1 against official Infineon documentation before procurement. Confirm package type and electrical ratings match system requirements. Check for RoHS compliance status. Ensure availability through authorized distributors as stock levels may vary. Validate datasheet version for latest specifications.
Select this component for applications requiring high current handling and efficient power switching. Consider the TO-220 package for through-hole mounting and adequate heat dissipation. Evaluate thermal resistance and on-resistance values against system power loss constraints. Ensure gate drive voltage compatibility with the specified threshold range.
This RF MOSFET belongs to Infineon's OptiMOS family, known for optimized performance in power switching applications. The series offers a balance of low on-resistance and fast switching speeds. It is engineered for reliability in demanding industrial and automotive environments, providing consistent performance across varying temperature conditions.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify thermal characteristics and switching parameters align with original design requirements.