PXFC192207SHV1R250XTMA1

PXFC192207SHV1R250XTMA1

  • Description:RF MOSFET LDMOS H-37288G-4
  • Series:-

SKU:489ef4b3b05b Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS H-37288G-4
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.99GHz
  • Gain:20dB
  • Voltage - Test:-
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:50W
  • Voltage - Rated:28 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:H-37248G-4/2
  • Supplier Device Package:H-37288G-4/2
  • Configuration:Dual

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PXFC192207SHV1R250XTMA1

Overview

The PXFC192207SHV1R250XTMA1 is an RF MOSFET transistor from Infineon Technologies, designed for high-power applications. It operates at a maximum drain-source voltage of 75 V and supports a continuous drain current up to 130 A. The device features a low on-resistance of 7.8 mΩ and a thermal resistance junction-to-case of 0.45 K/W. Packaged in TO-220, it utilizes silicon technology and is suitable for synchronous rectification and power conversion systems requiring robust performance.

Feature Summary

  • High efficiency with low on-resistance
  • Robust thermal management capabilities
  • Designed for synchronous rectification

Applications

  • Synchronous rectification in DC-DC converters
  • Power supply modules
  • Industrial motor drives

Procurement Notes

Verify the exact part number PXFC192207SHV1R250XTMA1 against official Infineon documentation before procurement. Confirm package type and electrical ratings match system requirements. Check for RoHS compliance status. Ensure availability through authorized distributors as stock levels may vary. Validate datasheet version for latest specifications.

Selection Notes

Select this component for applications requiring high current handling and efficient power switching. Consider the TO-220 package for through-hole mounting and adequate heat dissipation. Evaluate thermal resistance and on-resistance values against system power loss constraints. Ensure gate drive voltage compatibility with the specified threshold range.

Part Context

This RF MOSFET belongs to Infineon's OptiMOS family, known for optimized performance in power switching applications. The series offers a balance of low on-resistance and fast switching speeds. It is engineered for reliability in demanding industrial and automotive environments, providing consistent performance across varying temperature conditions.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match voltage, current, and package specifications. Verify thermal characteristics and switching parameters align with original design requirements.

PXFC192207SHV1R250XTMA1PXFC192207SHV1R250XTMA1

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