PXFC211507SCV1R250XTMA1

Description：RF MOSFET LDMOS H-37248G-4
Series：-

SKU:9f676722767f Category: RF FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS H-37248G-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.11GHz ~ 2.17GHz
Gain：20.4dB
Voltage - Test：-
Current Rating (Amps)：10µA
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：28 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：H-37248G-4/2
Supplier Device Package：H-37248G-4/2
Configuration：Dual

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PXFC211507SCV1R250XTMA1

Overview

The PXFC211507SC is a thermally-enhanced high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. It delivers 150 W output power at P1dB with 56% efficiency under typical pulsed CW conditions at 28 V. The device features integrated broadband input and output matching, high gain of approximately 19 dB, and robust ESD protection rated Class 2 per ANSI/ESDA/JEDEC JS-001. Packaged in H-37248G-4/2 with formed leads and an earless flange, it offers low thermal resistance of 0.56 °C/W and can handle 10:1 VSWR.

Feature Summary

Broadband internal input and output matching
Integrated ESD protection (Class 2)
Thermally-enhanced package with earless flanges
Capable of handling 10:1 VSWR

Applications

Multi-standard cellular power amplifiers
WCDMA base station transmitters
RF power generation circuits

Procurement Notes

Verify the specific ordering suffix V1 R250 XTMA1 corresponds to the tape and reel shipping format containing 250 pieces. Confirm that the package includes formed leads as specified in the ordering information section of the datasheet. Ensure compatibility with the H-37248G-4/2 earless flange footprint during procurement planning.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2110–2170 MHz range. Consider the 28 V operating voltage and 0.56 °C/W thermal resistance for heat sink requirements. Evaluate the 150 W pulsed CW capability against peak envelope power needs. Verify gate drive voltage limits (-6 to +10 V) match the control circuitry specifications.

Part Context

This part belongs to Infineon's portfolio of thermally enhanced LDMOS FETs optimized for RF power amplification. It utilizes advanced LDMOS process technology to provide superior reliability and thermal performance compared to standard discrete packages. The integration of matching networks simplifies the design of broadband cellular power amplifiers.