Single FETs, MOSFETs PXP010-20QXJ product image

PXP010-20QXJ

  • Description:PXP010-20QX/SOT8002/MLPAK33
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:107cb8ccf6eb Category: Brand:

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PXP010-20QXJ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PXP010-20QX/SOT8002/MLPAK33. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PXP010-20QXJ

  • Description:PXP010-20QX/SOT8002/MLPAK33
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:10.8A (Ta), 37.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:10mOhm @ 10.6A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.7W (Ta), 21W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:MLPAK33
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for PXP010-20QXJ

PXP010-20QXJ

Single FETs, MOSFETs Overview

The PXP010-20QX is a 20 V, P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an MLPAK33 (SOT8002) surface-mounted plastic package with a 3.3 x 3.3 mm footprint. The device features a low threshold voltage and supports a drain-source voltage of -20 V. At 25 °C, the on-state resistance is typically 8.4 mΩ at VGS = -4.5 V and ID = -10.6 A. The maximum continuous drain current reaches -17.1 A under specific conditions, with a peak current capability of -63 A for single pulses.

Single FETs, MOSFETs Feature Summary

  • Trench MOSFET technology enables fast switching performance and low threshold voltage operation.

Single FETs, MOSFETs Applications

  • High-side load switch
  • Battery management
  • DC-to-DC conversion
  • Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against the official Nexperia datasheet to ensure compatibility with your design requirements. Confirm that the MLPAK33 package dimensions and pinout match your PCB layout specifications. Check the most recent product data sheet for any updates to electrical characteristics or thermal limits before finalizing component selection.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact P-channel solution with high current handling capabilities. The MLPAK33 package offers a small footprint suitable for space-constrained designs. Ensure the gate drive voltage meets the minimum requirements for optimal RDS(on) performance. Consider the thermal resistance values when designing heat dissipation strategies for high-power applications.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's portfolio of power MOSFETs designed for efficient power management. The MLPAK33 package represents a thermal-enhanced surface-mount option, providing improved heat dissipation compared to standard packages of similar size. It is intended for use in modern electronic systems where size and efficiency are critical factors.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at -20 V.

What is the typical on-state resistance at VGS = -4.5 V?

The typical drain-source on-state resistance (RDSon) is 8.4 mΩ when VGS is -4.5 V and ID is -10.6 A at 25 °C.

PXP010-20QXJPXP010-20QXJ

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