ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Rds On (Max) @ Id, Vgs：46mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：2.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：195pF @ 20V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
Download product information
Overview
The QH8K22TCR is a dual N-channel small-signal MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 6.5A. The typical on-resistance (R_DS(on)) is 0.044Ω at V_GS = 4.5V and 0.035Ω at V_GS = 10V. Total gate charge (Q_g) is typically 1.3nC, with a power dissipation rating of 2.5W. The device operates within a storage temperature range of -55°C to 150°C and measures 2.8x3.0mm.
Feature Summary
- Dual N-channel configuration for efficient switching applications
- Low on-resistance characteristics optimized for low-voltage drive conditions
- Compact TSMT-8 surface-mount package design
Applications
- Motor control circuits
- Industrial automation equipment
- General-purpose switching applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements. Ensure the ordering part number matches the exact suffix required for tape-and-reel packaging quantities. Validate that the supply status aligns with long-term availability needs.
Selection Notes
Select this component for designs requiring a 40V dual N-channel MOSFET with low gate charge. Note that it is not recommended for new designs; consider alternative active parts if starting a fresh project. Verify thermal management capabilities given the 2.5W power dissipation limit in the specified package.
Part Context
This component belongs to ROHM's series of small-signal MOSFETs designed for compact electronic systems. It utilizes silicon technology to provide reliable performance in surface-mount configurations. The TSMT-8 package allows for high-density PCB layouts while maintaining adequate electrical isolation between channels.
Replacement Considerations
The QH8KB6TCR is documented as a replacement with the same package and similar specifications. Both components share identical pinout and mounting dimensions, facilitating potential board-level swaps where available.
