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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：365pF @ 10V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KA2TCR is a dual N-channel power MOSFET manufactured by ROHM Semiconductor in the TSMT-8 surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 4.5 A. The device exhibits a typical on-resistance (Rds(on)) of 0.04 Ω at Vgs = 4.5 V and 0.025 Ω at Vgs = 10 V. Total gate charge (Qg) is typically 4.7 nC, with a power dissipation (Pd) rating of 1.5 W. The component operates within a temperature range of -55°C to +150°C and utilizes enhancement mode technology.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Low on-resistance characteristics optimized for efficiency
- Small surface-mount TSMT-8 package design
Applications
- Switching power supplies
- Motor drive circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions adhere to humidity sensitivity levels defined in the component documentation.
Selection Notes
Select this component for applications requiring a 30 V dual N-channel MOSFET with low Rds(on) at standard logic drive voltages. Compare total gate charge and thermal performance against alternative devices if switching speed or heat dissipation constraints are critical. Verify that the TSMT-8 footprint matches the target PCB layout requirements.
Part Context
This part belongs to the QH8 series of dual MOSFETs from ROHM Semiconductor, designed for general-purpose switching applications. The series offers various voltage and current ratings packaged in the compact TSMT-8 form factor. These components are intended for consumer electronics and industrial equipment rather than automotive-grade environments.
Replacement Considerations
Direct pin-compatible replacements within the same family include QH8KA1TCR and QH8KA3TCR. Verify electrical parameters such as current rating and on-resistance when substituting to ensure compatibility with the original circuit design.
