QH8KB5TCR

QH8KB5TCR

$0.95
  • Description:MOSFET 2N-CH 40V 4.5A TSMT8
  • Series:-

SKU:a2e4b0f930d0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 4.5A TSMT8
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
  • Rds On (Max) @ Id, Vgs:44mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:150pF @ 20V
  • Power - Max:1.1W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:TSMT8
  • Grade:-
  • Qualification:-

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QH8KB5TCR

Overview

The QH8KB5TCR is a dual N-channel power MOSFET from ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 4.5 A. The device exhibits a typical on-resistance (R_DS(on)) of 0.044 Ω at V_GS = 4.5 V and 0.034 Ω at V_GS = 10 V. Total gate charge (Q_g) is typically 1.8 nC, with a maximum power dissipation (P_D) of 1.5 W. The component operates within a storage temperature range of -55 °C to 150 °C and is designed for low-conduction-loss switching applications.

Feature Summary

  • Dual N-channel configuration integrated into a compact TSMT-8 surface-mount package
  • Low on-resistance characteristics optimized for reducing power consumption in 24 V input systems
  • Enhancement mode operation suitable for motor drive and cooling fan control

Applications

  • Motor drivers for factory automation equipment
  • Cooling fans installed at base stations
  • Switching circuits for 24 V input devices

Procurement Notes

Verify the specific ordering suffix TCR confirms the tape-and-reel packaging format containing 3000 units per reel. Confirm RoHS compliance status and ensure the component is not utilized in automotive applications, as it is designated for standard-grade industrial use only. Cross-reference the datasheet revision date to ensure parameter accuracy.

Selection Notes

Select this component when a dual N-channel MOSFET with 40 V rating and approximately 4.5 A current capacity is required in a small footprint. The low R_DS(on) makes it suitable for efficiency-critical designs. Ensure the driving circuit provides sufficient gate voltage (4.5 V or 10 V) to achieve the specified low on-resistance values.

Part Context

The QH8KB5TCR belongs to ROHM's series of dual N-channel MOSFETs designed for general-purpose switching. It shares the TSMT-8 package code with other variants like QH8JB5 and QS8K11TCR but differs in polarity and electrical ratings. This specific model targets cost-sensitive industrial applications where space constraints and thermal efficiency are primary design drivers.

Replacement Considerations

For obsolete or unavailable stock, consider QH8KB6TCR as a direct replacement with the same TSMT-8 package and 40 V rating, though it offers lower on-resistance and higher current capacity. Verify pin compatibility and thermal performance before substitution.

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