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The QH8KB5TCR is a dual N-channel power MOSFET from ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 4.5 A. The device exhibits a typical on-resistance (R_DS(on)) of 0.044 Ω at V_GS = 4.5 V and 0.034 Ω at V_GS = 10 V. Total gate charge (Q_g) is typically 1.8 nC, with a maximum power dissipation (P_D) of 1.5 W. The component operates within a storage temperature range of -55 °C to 150 °C and is designed for low-conduction-loss switching applications.
Verify the specific ordering suffix TCR confirms the tape-and-reel packaging format containing 3000 units per reel. Confirm RoHS compliance status and ensure the component is not utilized in automotive applications, as it is designated for standard-grade industrial use only. Cross-reference the datasheet revision date to ensure parameter accuracy.
Select this component when a dual N-channel MOSFET with 40 V rating and approximately 4.5 A current capacity is required in a small footprint. The low R_DS(on) makes it suitable for efficiency-critical designs. Ensure the driving circuit provides sufficient gate voltage (4.5 V or 10 V) to achieve the specified low on-resistance values.
The QH8KB5TCR belongs to ROHM's series of dual N-channel MOSFETs designed for general-purpose switching. It shares the TSMT-8 package code with other variants like QH8JB5 and QS8K11TCR but differs in polarity and electrical ratings. This specific model targets cost-sensitive industrial applications where space constraints and thermal efficiency are primary design drivers.
For obsolete or unavailable stock, consider QH8KB6TCR as a direct replacement with the same TSMT-8 package and 40 V rating, though it offers lower on-resistance and higher current capacity. Verify pin compatibility and thermal performance before substitution.