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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5.5A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：460pF @ 30V
- Power - Max：1.1W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KC6TCR is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in a TSMT-8 surface-mount package. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 4 A. The device exhibits a typical on-resistance (Rds(on)) of 56 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 6.7 nC. Thermal performance includes a power dissipation (Pd) of 1.5 W and an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration within a compact TSMT-8 surface-mount package for space-constrained designs.
- Low on-resistance characteristics optimized for reducing conduction losses in switching applications.
- High thermal stability supporting operation up to +150°C junction temperature.
Applications
- Motor drive circuits in factory automation equipment
- Cooling fan control in base station infrastructure
- General-purpose switching applications for 24V input systems
Procurement Notes
Verify the specific suffix 'TCR' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and moisture sensitivity level requirements prior to soldering processes.
Selection Notes
Select this component when a 100V rating and 4A current capacity are required in an 8-pin small outline package. Compare Rds(on) values at relevant gate drive voltages against alternatives. Verify that the 1.5W power dissipation limit aligns with the thermal management capabilities of the target PCB layout.
Part Context
This part belongs to the QH8K series of dual N-channel MOSFETs designed for low-power switching. It shares the TSMT-8 footprint with other variants like QH8KE6TCR but differs in voltage and current ratings. The series targets industrial and communication equipment requiring efficient motor or fan control.
Replacement Considerations
QH8KB6TCR offers similar TSMT-8 packaging but with lower voltage (40V) and higher current (8A). QH8KE6TCR provides identical 100V/4A ratings in the same package. Verify pin compatibility and electrical parameter overlaps before substitution.
