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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 2A TSMT8
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：202mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：90pF @ 50V
- Power - Max：1.5W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：TSMT8
- Grade：-
- Qualification：-
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Overview
The QH8KE5TCR is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an 8-terminal TSMT-8 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 2 A. The device exhibits a typical on-resistance of 202 mOhms at Vgs = 4.5 V and 155 mOhms at Vgs = 10 V. Key electrical parameters include a gate threshold voltage of 2.5 V, total gate charge of 2.8 nC, and power dissipation capability of 1.5 W. Operating temperatures range from -55°C to +150°C, with rise and fall times specified at 6 ns and 5 ns respectively.
Feature Summary
- Dual N-channel configuration integrated into a single compact TSMT-8 package for space-constrained designs.
- Optimized low on-resistance characteristics suitable for efficient switching applications.
- Enhanced mode operation with standard gate drive voltage compatibility.
Applications
- Switching power supplies
- Motor drive circuits
Procurement Notes
Verify the specific suffix 'TCR' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component matches the required RoHS compliance status and humidity sensitivity level for your assembly process. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. Compare the 202 mOhm on-resistance and 2 A current rating against system load requirements. Consider the 1.5 W power dissipation limit and thermal management needs for the TSMT-8 package. Verify that the 100 V breakdown voltage exceeds the maximum circuit voltage spikes.
Part Context
This part belongs to the QH8KE series of dual N-channel MOSFETs from ROHM. It shares the TSMT-8 package form factor with other variants like the QH8KE6TCR, which offers higher current capacity but different resistance characteristics. The series is designed for general-purpose switching applications requiring compact dual-transistor solutions.
Replacement Considerations
Direct substitutes may include the QH8KE6TCR for higher current needs, though on-resistance and gate charge will differ. Check pinout compatibility and thermal performance when considering alternative dual N-channel MOSFETs in the TSMT-8 package from other manufacturers.
