QH8ME5TCR

$1.02

Description：MOSFET N/P-CH 100V 2A TSMT8
Series：-

SKU:e1c0dbb32dba Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 100V 2A TSMT8
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Rds On (Max) @ Id, Vgs：202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.8nC @ 10V, 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：90pF @ 50V, 590pF @ 50V
Power - Max：1.1W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：TSMT8
Grade：-
Qualification：-

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QH8ME5TCR

Overview

The QH8ME5TCR is a dual power MOSFET array manufactured by ROHM Semiconductor, featuring one N-Channel and one P-Channel transistor within a TSMT-8 surface-mount package. It supports a drain-source voltage of 100 V and continuous drain current of 2 A. Key electrical parameters include an on-resistance of 38 mOhms, gate-source voltage limits of ±20 V, threshold voltage of 1.2 V, and gate charge of 10.2 nC. The device operates between -55°C and +150°C with 1.5 W power dissipation.

Feature Summary

Integrates complementary N-channel and P-channel transistors in a single compact package for efficient circuit design.
Engineered for high-speed switching applications with low gate charge and fast rise/fall times.
Designed for robust performance in switching power supplies and motor drive circuits.

Applications

Switching power supply circuits
Motor drive systems
Industrial control applications

Procurement Notes

Verify the specific suffix 'TCR' to confirm reel packaging configuration. Ensure compatibility with TSMT-8 footprint dimensions and thermal requirements. Cross-reference datasheet revisions for any updates to absolute maximum ratings or testing conditions before finalizing procurement specifications.

Selection Notes

Select this component when a dual complementary MOSFET solution is required for 100V applications. Consider the 38 mOhms on-resistance for efficiency needs. Verify that the TSMT-8 package size fits the PCB layout constraints and that the 1.5 W power dissipation rating meets the thermal management design goals.

Part Context

This part belongs to ROHM's Power MOSFET series, designed for general-purpose switching. It complements other dual MOSFET options like the QH8KE5TCR (dual N-channel) and QH8JA1TCR (dual P-channel), offering a mixed-polarity solution for bridge drivers or logic-level switching tasks.

Replacement Considerations

Direct substitutes may include QH8KE5TCR if dual N-channel topology is acceptable, or UT6ME5TCR for DFN-2020-8D packaging alternatives. Verify pinout compatibility and electrical parameter margins before substitution.