QID1210006

Overview

The Powerex QID1210006 is a split dual silicon/silicon carbide hybrid IGBT module rated for 100 Amperes and 1200 Volts. It integrates two individual IGBT transistors, each paired with a reverse-connected super-fast recovery free-wheeling silicon carbide Schottky diode. The device features an isolated baseplate constructed from AlSiC material with aluminum nitride isolation to facilitate thermal management. Designed for high-frequency applications, it supports hard switching up to 30 kHz and soft switching up to 80 kHz. Key electrical parameters include a collector-emitter saturation voltage of 5.0V at 100A and 25°C, a maximum junction temperature of 150°C, and an internal inductance of 10 nH.

Feature Summary

• Integrates discrete super-fast recovery free-wheeling silicon carbide Schottky diodes to reduce turn-off switching losses.
• Features an isolated baseplate made of AlSiC material with aluminum nitride insulation for simplified assembly and efficient heat sinking.
• Designed with low internal inductance to support high-frequency operation in demanding power systems.

Applications

• High frequency type power systems including UPS, induction heating, welders, and robotics.
• Energy saving power systems such as fans, pumps, and consumer appliances.
• High temperature power electronics in electric vehicle and aviation systems.

Procurement Notes

Verify the current revision status of the datasheet, as the provided documentation is marked Preliminary. Confirm that the specific ordering suffix matches the required pinout and packaging configuration. Ensure that the mounting torque specifications are strictly adhered to during installation to maintain mechanical integrity and thermal performance.

Selection Notes

Select this component for designs requiring high-frequency switching capabilities above standard silicon modules. Evaluate the thermal resistance values against the system's cooling capacity to ensure junction temperatures remain within the 150°C limit. Consider the hybrid Si/SiC structure for applications prioritizing reduced switching losses over pure silicon alternatives.

Part Context

This module belongs to Powerex's portfolio of split dual IGBT components designed for robust power conversion. It utilizes a hybrid architecture combining silicon IGBTs with silicon carbide freewheeling diodes to optimize performance in high-speed switching environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation. Verify compatibility with existing gate drive circuits when considering alternative models.

FAQ

What is the maximum operating frequency for this module?

The module is designed for frequencies upwards of 30 kHz for hard switching applications and up to 80 kHz for soft switching applications.

How many switches are contained within one module?

Each module contains two individual switches (IGBT transistors), each with an associated free-wheeling diode.

What is the isolation voltage between the main terminal and the baseplate?

The isolation voltage is 2500 Volts AC for 1 minute.