QJD1210SA1

Overview

The Powerex QJD1210SA1 is a split dual Silicon Carbide (SiC) MOSFET module rated for 1200V drain-source voltage and 100A continuous drain current. It integrates two individual N-channel SiC transistors, each paired with a reverse-connected fast recovery free-wheeling Schottky diode. The device features an isolated baseplate design utilizing aluminum nitride insulation and a copper baseplate for thermal management. Key electrical parameters include a maximum gate-source voltage of ±20V, a typical junction-to-case thermal resistance of 0.24°C/W for the MOSFET part, and an internal inductance of 10nH. The module supports a junction temperature range from -40°C to 150°C.

Feature Summary

• Silicon Carbide construction enables high-speed switching with low capacitance and reduced switching losses.
• Split dual configuration provides two independent switches per module with integrated fast recovery Schottky diodes.
• Isolated baseplate design offers simplified system assembly and enhanced thermal management capabilities.
• Low drive requirement and industry-leading on-resistance contribute to high power density performance.

Applications

• High frequency power systems including UPS, induction heating, and robotics.
• Energy saving power systems such as fans, pumps, and consumer appliances.
• High temperature power electronics in electric vehicle and aviation systems.

Procurement Notes

Verify the specific revision status of the datasheet, as the provided documentation is marked preliminary. Confirm that the mounting torque for M6 screws meets the specified 40 in-lb requirement during installation. Ensure the operating junction temperature remains within the -40°C to 150°C range to maintain device reliability and prevent thermal overstress.

Selection Notes

Select this module for applications requiring high-frequency operation and robust thermal performance. The 1200V rating and 100A current capacity suit medium-power inverters and converters. Consider the 10nH internal inductance for minimizing parasitic effects in high-speed switching circuits. Verify compatibility with the required gate drive voltage levels, which typically operate between ±15V.

Part Context

This component belongs to the Powerex Silicon Carbide MOSFET Module family. These modules are engineered for high-frequency applications where efficiency and thermal management are critical. The split dual architecture allows for flexible circuit topologies while maintaining isolation between the semiconductor components and the heat sinking baseplate.

Replacement Considerations

No public confirmed substitute part numbers are available in the source material.